CS2N60A4HY

Silicon N-Channel Power MOSFET

CR Micro

CS2N60A4HY Features

* l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data: 8.5nC) l Low Reverse transfer capacitances(Typical: 5.4pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 2 A 35 W 3.6 Ω Applications： Power switch circuit of adaptor and char

CS2N60A4HY General Description

CS2N60 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS2N60A4HY Datasheet (443.39 KB)