CS2N60A4HY Datasheet, Mosfet, CR Micro

CS2N60A4HY Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data: 8.5nC) l Low Reverse transfer capacitances(Typical: 5.4pF) l 100% Single Pulse avalanche energy Test

PDF File Details

Part number:

CS2N60A4HY

Manufacturer:

CR Micro

File Size:

443.39kb

Download:

📄 Datasheet

Description:

Silicon n-channel power mosfet. CS2N60 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS2N60A4HY Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

TAGS

CS2N60A4HY

CR Micro

📁 Related Datasheet

CS2N60A4H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS2N60 A4H ○R General Description： VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt.

CS2N60A4R - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CS2N60 A4R General Description： CS2N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali.

CS2N60A4RZ-G - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CS2N60 A4RZ-G General Description： CS2N60 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the .

CS2N60A4RZ-G - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CS2N60 A4RZ-G General Description： CS2N60 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the .

CS2N60A4T - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS2N60 A4T ○R General Description： CS2N60 A4T, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.

CS2N60A23H - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET CS2N60 A23H General Description： CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.

CS2N60A3H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt.

CS2N60A7H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS2N60 A7H ○R General Description： VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt.

CS2N60 - N-CHANNEL MOSFET (LZG)
BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .

CS2N60 - VDMOS Transistor (ETC)
CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2. .