CS2N60A23H

Silicon N-Channel Power MOSFET

CR Micro

CS2N60A23H Features

* ○R 600 V 2 A 3 W 3.6 Ω

* Fast Switching

* Low ON Resistance(Rdson≤4.5Ω)

* Low Gate Charge (Typical Data:8.5nC)

* Low Reverse transfer capacitances(Typical:5.4pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. A

CS2N60A23H General Description

CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TA=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit .

CS2N60A23H Datasheet (556.66 KB)