CS2N60A23H - Silicon N-Channel Power MOSFET

CR Micro

CS2N60A23H Datasheet Preview — Preview of CS2N60A23H PDF

Datasheet Details

Part number	CS2N60A23H
Manufacturer	CR Micro
File Size	556.66 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N60A23H-CRMicro.pdf

CS2N60A23H Product details

Description

CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TA=25℃) RDS(ON)Typ performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the RoHS standard..

Features

○R 600 V 2 A 3 W 3.6 Ω.
Fast Switching.
Low ON Resistance(Rdson≤4.5Ω).
Low Gate Charge (Typical Data:8.5nC).
Low Reverse transfer capacitances(Typical:5.4pF).
100% Single Pulse avalanche energy Test.

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Published: Dec 9, 2024 |