CS2N60A23H - Silicon N-Channel Power MOSFET
CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TA=25℃) RDS(ON)Typ performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
CS2N60A23H Features
* ○R 600 V 2 A 3 W 3.6 Ω
* Fast Switching
* Low ON Resistance(Rdson≤4.5Ω)
* Low Gate Charge (Typical Data:8.5nC)
* Low Reverse transfer capacitances(Typical:5.4pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. A
