CS2N60A23H Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET CS2N60 A23H General .
CS2N60 A23H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: CS2N60A23H
Manufacturer: CR Micro
File Size: 556.66 KB
Datasheet: CS2N60A23H-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* ○R 600 V 2 A 3 W 3.6 Ω
* Fast Switching
* Low ON Resistance(Rdson≤4.5Ω)
* Low Gate Charge (Typical Data:8.5nC)
* Low Reverse transfer capacitances(Typical:5.4pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Ta = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse

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CS2N60A23H Silicon N-Channel Power MOSFET CR Micro

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