CS2N60FA9H Datasheet, Mosfet, Huajing Microelectronics

CS2N60FA9H Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test App

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Part number:

CS2N60FA9H

Manufacturer:

Huajing Microelectronics

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333.47kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (T

CS2N60FA9H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IA

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CS2N60FA9H

Huajing Microelectronics

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