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CS2N60FA9H

Silicon N-Channel Power MOSFET

CS2N60FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS

CS2N60FA9H General Description

VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in vario.

CS2N60FA9H Datasheet (333.47 KB)

Preview of CS2N60FA9H PDF

Datasheet Details

Part number:

CS2N60FA9H

Manufacturer:

Huajing Microelectronics

File Size:

333.47 KB

Description:

Silicon n-channel power mosfet.

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CS2N60FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

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