CS2N65A4HY Datasheet - Huajing Microelectronics

CS2N65A4HY Silicon N-Channel Power MOSFET

CS2N65 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS2N65A4HY Features

* l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data: 9nC) l Low Reverse transfer capacitances(Typical: 6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS2N65A4HY-HuajingMicroelectronics.pdf