CS2N65A4HY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS2N65A4HY Datasheet Preview — Preview of CS2N65A4HY PDF

Datasheet Details

Part number	CS2N65A4HY
Manufacturer	Huajing Microelectronics
File Size	545.27 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS2N65A4HY-HuajingMicroelectronics.pdf

CS2N65A4HY Product details

Description

CS2N65 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-252, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data: 9nC) l Low Reverse transfer capacitances(Typical: 6pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |