CS2N100A4R Datasheet - CR Micro

CS2N100A4R Silicon N-Channel Power MOSFET

CS2N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 1000 2 140 5.7 performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS2N100A4R Features

* l Fast Switching l Low ON Resistance(Rdson≤6.5Ω) l Low Gate Charge (Typical Data: 18.8nC) l Low Reverse transfer capacitances(Typical: 0.9pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif

CS2N100A4R-CRMicro.pdf