CS2N10AS-G - Silicon N-Channel Power MOSFET
CS2N10 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is suitable for use as a battery protect or in other applications.
The package
CS2N10AS-G Features
* l Fast Switching l Low ON Resistance(Rdson≤ 220mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： LED Drive,Power Switch For adaptor. Absolute（TA= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a
