CS2N15AE-1 Datasheet - CR Micro

CS2N15AE-1 Silicon N-Channel Power MOSFET

CS2N15 AE-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS2N15AE-1 Features

* Fast Switching

* Low ON Resistance(Rdson≤300mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 2 A 2 W 230 mΩ D1 D1 D2 D2 S1 G1 S2

CS2N15AE-1-CRMicro.pdf