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CS2N15AE-1 Silicon N-Channel Power MOSFET

CS2N15AE-1 Description

Silicon N-Channel Power MOSFET ○R CS2N15 AE-1 General .
CS2N15 AE-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve sw.

CS2N15AE-1 Features

* Fast Switching
* Low ON Resistance(Rdson≤300mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

CS2N15AE-1 Applications

* Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 2 A 2 W 230 mΩ D1 D1 D2 D2 S1 G1 S2 G2 Absolute（TA= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain C

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Datasheet Details

Part number
CS2N15AE-1
Manufacturer
CR Micro
File Size
562.89 KB
Datasheet
CS2N15AE-1-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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