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H55S5122EFR-75M

512Mbit (16Mx32bit) Mobile SDR Memory

H55S5122EFR-75M Datasheet (949.60 KB)

Preview of H55S5122EFR-75M PDF Datasheet

Datasheet Details

Part number:

H55S5122EFR-75M

Manufacturer:

Hynix Semiconductor

File Size:

949.60 KB

Description:

512mbit (16mx32bit) mobile sdr memory.
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

H55S5122EFR-75M Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During

H55S5122EFR-75M General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Sep. 2010 1 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series Document Title 4Bank x 4M x 32bits Synchrono.

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H55S5122EFR-75M 512Mbit 16Mx32bit Mobile SDR Memory Hynix Semiconductor

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