H55S5122EFR Datasheet - Hynix Semiconductor

H55S5122EFR, 512Mbit (16Mx32bit) Mobile SDR Memory

512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
and is subject to change without notice.

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Datasheet Details

Part number:

H55S5122EFR

Manufacturer:

Hynix Semiconductor

File Size:

949.60 KB

Description:

512Mbit (16Mx32bit) Mobile SDR Memory

Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During

Applications

* which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x32. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data

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H55S5122EFR 512Mbit 16Mx32bit Mobile SDR Memory Hynix Semiconductor

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