Datasheet4U Logo Datasheet4U.com

H55S5122EFR-A3M, H55S5122EFR Datasheet - Hynix Semiconductor

H55S5122EFR-A3M - 512Mbit (16Mx32bit) Mobile SDR Memory

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Rev 1.2 / Sep.

2010 1 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series Document Title 4Bank x 4M x 32bits Synchrono

H55S5122EFR-A3M Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During

H55S5122EFR-HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H55S5122EFR-A3M, H55S5122EFR. Please refer to the document for exact specifications by model.
H55S5122EFR-A3M Datasheet Preview Page 2 H55S5122EFR-A3M Datasheet Preview Page 3

Datasheet Details

Part number:

H55S5122EFR-A3M, H55S5122EFR

Manufacturer:

Hynix Semiconductor

File Size:

949.60 KB

Description:

512mbit (16mx32bit) mobile sdr memory.

Note:

This datasheet PDF includes multiple part numbers: H55S5122EFR-A3M, H55S5122EFR.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags