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H55S5122EFR-A3M, H55S5122EFR Datasheet - Hynix Semiconductor

H55S5122EFR-A3M 512Mbit (16Mx32bit) Mobile SDR Memory

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Sep. 2010 1 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series Document Title 4Bank x 4M x 32bits Synchrono.

H55S5122EFR-A3M Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During

H55S5122EFR-HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H55S5122EFR-A3M, H55S5122EFR. Please refer to the document for exact specifications by model.
H55S5122EFR-A3M Datasheet Preview Page 2 H55S5122EFR-A3M Datasheet Preview Page 3

Datasheet Details

Part number:

H55S5122EFR-A3M, H55S5122EFR

Manufacturer:

Hynix Semiconductor

File Size:

949.60 KB

Description:

512mbit (16mx32bit) mobile sdr memory.

Note:

This datasheet PDF includes multiple part numbers: H55S5122EFR-A3M, H55S5122EFR.
Please refer to the document for exact specifications by model.

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H55S5122EFR-A3M H55S5122EFR 512Mbit 16Mx32bit Mobile SDR Memory Hynix Semiconductor

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