HMA425S6AFR6N Datasheet - Hynix Semiconductor

DDR4 SDRAM SO-DIMM

260pin DDR4 SDRAM SODIMM DDR4 SDRAM SO-DIMM Based on 4Gb A-die HMA425S6AFR6N HMA451S6AFR8N HMA451S7AFR8N HMA41GS6AFR8N HMA41GS7AFR8N SK hynix reserves the right to change products or specifications without notice. Rev. 1.7 / Mar.2016 1 Revision History Revision No. 0.1 0.2 0.21 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 History Initial Release Changed development plan Module dimension Update (Detail-A : 0.125->1.125) IDD Specification update Changed maximum VDDSPD from 2.75V to 3.6 Revised CWL v.

HMA425S6AFR6N Features

* Power Supply: VDD=1.2V (1.14V to 1.26V)

* VDDQ = 1.2V (1.14V to 1.26V)

* VPP - 2.5V (2.375V to 2.75V)

* VDDSPD=2.25V to 3.6V

* Functionality and operations comply with the DDR4 SDRAM datasheet

* 16 internal banks

* Bank Grouping is applied, a

HMA425S6AFR6N General Description

SK hynix Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outine Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. These DDR4 SDRAM Unbuffered Small Outline DIMMs are intended for use as main memo.

HMA425S6AFR6N Datasheet (1.10 MB)