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HY51V7403HG 4M x 4Bit EDO DRAM

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Description

HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY .
The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.

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Datasheet Specifications

Part number
HY51V7403HG
Manufacturer
Hynix Semiconductor
File Size
96.42 KB
Datasheet
HY51V7403HG_HynixSemiconductor.pdf
Description
4M x 4Bit EDO DRAM

Features

* include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. FEATURES
* Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability

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