HY57V281620FSTP Datasheet, (8mx16bit), Hynix Semiconductor

HY57V281620FSTP Features

• (8mx16bit)
• Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outpu

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HY57V281620FSTP

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Hynix Semiconductor

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📄 Datasheet

Description:

Synchronous dram memory 128mbit (8mx16bit). and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No pat

HY57V281620FSTP Application

• Applications which require wide data I/O and high bandwidth. HY57V281620F(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620F(L/S

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HY57V281620FSTP

Hynix Semiconductor

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