HY57V281620FTP Synchronous DRAM Memory 128Mbit (8Mx16bit)

Hynix Semiconductor

Description

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No.0.1 1.0 1.1 Init.
and is subject to change without notice.

📥 Download Datasheet

HY57V281620FTP Datasheet Preview — Preview of HY57V281620FTP PDF

Datasheet Specifications

Part number: HY57V281620FTP
Manufacturer: Hynix Semiconductor
File Size: 773.35 KB
Datasheet: HY57V281620FTP_HynixSemiconductor.pdf
Description: Synchronous DRAM Memory 128Mbit (8Mx16bit)

Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

Applications

* which require wide data I/O and high bandwidth. HY57V281620F(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. HY57V281620F(L/S)TP is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock inp

HY57V281620FTP Distributors

📁 Related Datasheet

HY57V28420BLT HY57V28420BT HY57V561620BLT-H HY57V641620FTP HY57V641620LTP HY57V641620STP

📌 All Tags

HY57V281620FTP Synchronous DRAM Memory 128Mbit 8Mx16bit Hynix Semiconductor

Hynix Semiconductor HY57V281620FTP-like datasheet