HY5DU12422C, HY5DU121622C 512 Mb DDR SDRAM

Hynix Semiconductor

HY5DU12422C Description

512Mb DDR SDRAM HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product .
and is subject to change without notice.

HY5DU12422C Features

* VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V ± 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source sync

HY5DU12422C Applications

* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

📥 Download Datasheet

HY5DU12422C Datasheet Preview — This datasheet PDF includes multiple part numbers: HY5DU12422C, HY5DU121622C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY5DU12422C, HY5DU121622C
Manufacturer: Hynix Semiconductor
File Size: 252.13 KB
Datasheet: HY5DU121622C_HynixSemiconductor.pdf
Description: 512 Mb DDR SDRAM
Note: This datasheet PDF includes multiple part numbers: HY5DU12422C, HY5DU121622C.
Please refer to the document for exact specifications by model.

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512 DDR SDRAM Hynix Semiconductor

Hynix Semiconductor HY5DU12422C-like datasheet

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