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HY5DU12822C, HY5DU121622C 512 Mb DDR SDRAM

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Description

512Mb DDR SDRAM HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product .
and is subject to change without notice.

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This datasheet PDF includes multiple part numbers: HY5DU12822C, HY5DU121622C. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HY5DU12822C, HY5DU121622C
Manufacturer
Hynix Semiconductor
File Size
252.13 KB
Datasheet
HY5DU121622C_HynixSemiconductor.pdf
Description
512 Mb DDR SDRAM
Note
This datasheet PDF includes multiple part numbers: HY5DU12822C, HY5DU121622C.
Please refer to the document for exact specifications by model.

Features

* VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V ± 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source sync

Applications

* which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

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