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HY5DV281622DT 128M(8Mx16) GDDR SDRAM

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Description

www.DataSheet4U.com HY5DV281622DT 128M(8Mx16) GDDR SDRAM HY5DV281622DT This document is a general product .
and is subject to change without notice.

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Datasheet Specifications

Part number
HY5DV281622DT
Manufacturer
Hynix Semiconductor
File Size
305.99 KB
Datasheet
HY5DV281622DT_HynixSemiconductor.pdf
Description
128M(8Mx16) GDDR SDRAM

Features

* 3.3V for VDD and 2.5V for VDDQ power supply All inputs and outputs are compatible with SSTL_2 interface JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch Fully differential clock inputs (CK, /CK) operation Double

Applications

* which requires high bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks

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