HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM

Hynix Semiconductor

Description

HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM .
The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point to point applications which requir.

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Datasheet Specifications

Part number: HY5DV651622
Manufacturer: Hynix Semiconductor
File Size: 85.23 KB
Datasheet: HY5DV651622-HynixSemiconductor.pdf
Description: 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM

Features

* 3.3V for VDD and 2.5V for VDDQ power supply (centered DQ)
* All inputs and outputs are compatible with SSTL_2 interface
* Data strobes synchronized with output data for read and input data for write
* JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch

Applications

* which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16. HY5DV651622 offers fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock(falling edges of the CLK ),

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HY5DV651622 Banks 16Bit DOUBLE DATA RATE SDRAM Hynix Semiconductor

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