HY5S5B6GLF-SE Datasheet, Memory, Hynix Semiconductor

HY5S5B6GLF-SE Features

  • Memory
  • Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK)
  • MULTIBANK OPERATION -

PDF File Details

Part number:

HY5S5B6GLF-SE

Manufacturer:

Hynix Semiconductor

File Size:

2.99MB

Download:

📄 Datasheet

Description:

256mbit (16mx16bit) mobile sdr memory. and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses a

Datasheet Preview: HY5S5B6GLF-SE 📥 Download PDF (2.99MB)
Page 2 of HY5S5B6GLF-SE Page 3 of HY5S5B6GLF-SE

HY5S5B6GLF-SE Application

  • Applications which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x16. Mobile SDRAM is a type of DRAM which

TAGS

HY5S5B6GLF-SE
256Mbit
16Mx16bit
Mobile
SDR
Memory
Hynix Semiconductor

📁 Related Datasheet

HY5S5B6GLF-S - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-6 - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-6E - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-H - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLF-HE - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLFP-6 - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLFP-6E - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLFP-H - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLFP-HE - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

HY5S5B6GLFP-S - 256Mbit (16Mx16bit) Mobile SDR Memory (Hynix Semiconductor)
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts