HY5V26CF (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM

Hynix Semiconductor

Description

www.DataSheet4U.com HY5V26C(L/S)F 4 Banks x 2M x 16bits Synchronous DRAM .
Preliminary The Hynix HY5V26C(L/S)F is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large me.

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Datasheet Specifications

Part number: HY5V26CF
Manufacturer: Hynix Semiconductor
File Size: 286.43 KB
Datasheet: HY5V26CF_HynixSemiconductor.pdf
Description: (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM

Features

* Single 3.3±0.3V power supply All device balls are compatible with LVTTL interface 54Ball FBGA (10.5mm x 8.3mm) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM
* Internal four banks operati

Applications

* which require large memory density and high bandwidth. HY5V26C(L/S)F is organized as 4banks of 2,097,152x16 HY5V26C(L/S)F is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data path

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HY5V26CF HY5V26CxF Banks 16bits Synchronous DRAM Hynix Semiconductor

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