HY62U8200B Datasheet - Hynix Semiconductor

HY62U8200B 256K x8 bit 3.0V Low Power CMOS slow SRAM

and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 06 / Apr. 2001 Hynix Semiconductor Y62U8200B Series DESCRIPTION The HY62U8200B is a high speed, low power and 2M bit CMOS SRAM organized .

HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No 03 History Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load - VIH max : Vcc + 0.2V => Vcc + 0.3V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.29.2000 Remark Final 04 Se.

HY62U8200B Features

* Fully static operation and Tri-state output

* TTL compatible inputs and outputs

* Battery backup( LL-part ) -. 2.0V(min) data retention

* Standard pin configuration -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed) Product Voltage Speed Operation No. (V)

HY62U8200B Datasheet (184.14 KB)