HY62U8400A Datasheet - Hynix Semiconductor

HY62U8400A 512Kx8bit CMOS SRAM

and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 07 / Apr. 2001 Hynix Semiconductor HY62U8400A Series DESCRIPTION The HY62U8400A is a high-speed, low power and 4M bits CMOS SRAM organize.

HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No 04 History Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ 20uA Revised - Change Iccdr Value : 15uA => 20uA Marking Information Add Revised - E.T (-25~85°C), I.T (-40~85°C) Part Insert - AC Test Condition Add : 5pF Test Load - tCLZ Value Change : 15ns/20ns - > 10ns - VIH max : Vcc + 0.2V => Vcc + 0.3V - VIL min : - 0.2V => - 0.

HY62U8400A Features

* Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(LL-part) -. 2.0V(min) data retention

* Standard pin configuration -. 32pin 525mil SOP -. 32pin 400mil TSOP-II (Standard and Reversed) St

HY62U8400A Datasheet (177.88 KB)