Datasheet Details
- Part number
- H5TQ4G83EFR
- Manufacturer
- Hynix Semiconductor
- File Size
- 430.73 KB
- Datasheet
- H5TQ4G83EFR-HynixSemiconductor.pdf
- Description
- 4Gb DDR3 SDRAM
H5TQ4G83EFR Description
4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83EFR-xxC H5TQ4G83EFR-xxI H5TQ4G83EFR-xxL H5TQ4G83EFR-xxJ H5TQ4G83EFR-xxK.
The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC, H5TQ4G83EFR-xxI, H5TQ4G63EFR-xxI, H5TQ4G83EFR-xxL, H5TQ4G63EFR-xxL, H5TQ4G83EFR-xxJ, H5TQ4G63EFR-xxJ, H5TQ4G83EFR.
H5TQ4G83EFR Features
* and Ordering Information
FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* On chip DLL align DQ, DQS and DQS transition with CK transition
* DM masks write data-in at the both ris
H5TQ4G83EFR Applications
* which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes
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