HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM

Hynix Semiconductor

HY57V658020B Description

HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM .
The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density a.

HY57V658020B Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation

HY57V658020B Applications

* which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x8. HY57V658020B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths

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Datasheet Details

Part number: HY57V658020B
Manufacturer: Hynix Semiconductor
File Size: 146.35 KB
Datasheet: HY57V658020B_HynixSemiconductor.pdf
Description: 4 Banks x 2M x 8Bit Synchronous DRAM

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Banks 8Bit Synchronous DRAM Hynix Semiconductor

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