HY5DU121622DTP - 512Mb DDR SDRAM

Hynix Semiconductor

Datasheet Details

Part number	HY5DU121622DTP
Manufacturer	Hynix Semiconductor
File Size	271.52 KB
Description	512Mb DDR SDRAM
Datasheet	HY5DU121622DTP_HynixSemiconductor.pdf

and is subject to change without notice.

VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS.

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Published: Dec 21, 2010 |