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2N5989 NPN Transistor

2N5989 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum L.

2N5989 Applications

* Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Co

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Datasheet Details

Part number
2N5989
Manufacturer
INCHANGE
File Size
185.13 KB
Datasheet
2N5989-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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