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2N5991 NPN Transistor

2N5991 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum L.

2N5991 Applications

* Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM C

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Datasheet Details

Part number
2N5991
Manufacturer
INCHANGE
File Size
184.87 KB
Datasheet
2N5991-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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