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2N6377 Silicon PNP Power Transistor

2N6377 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

2N6377 Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC

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Datasheet Details

Part number
2N6377
Manufacturer
INCHANGE
File Size
215.62 KB
Datasheet
2N6377-INCHANGE.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE
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