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2N6379 Silicon PNP Power Transistors

2N6379 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 .
Low Collector Saturation Voltage. High DC Current Gain. High Power Dissipation APPLICATIONS. Designed for use in industrial-military.

2N6379 Applications

* Designed for use in industrial-military power amplifier and switching circuit application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-C

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Datasheet Details

Part number
2N6379
Manufacturer
Inchange Semiconductor
File Size
38.33 KB
Datasheet
2N6379-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
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