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2N6932 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number
2N6932
Manufacturer
INCHANGE
File Size
182.59 KB
Datasheet
2N6932-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for off-line power supplies,switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous C

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