2N6935 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2N6935
Manufacturer: Inchange Semiconductor
File Size: 191.04 KB
Datasheet: 2N6935_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for off-line power supplies，switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 650 V 400 V VEBO Emitter-Base voltage 8 V IC Collector Current-Cont

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2N6935 Silicon NPN Power Transistor Inchange Semiconductor

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