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2SA1116 PNP Transistor

2SA1116 Description

isc Silicon PNP Power Transistor 2SA1116 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min. High Power Dissipation. Complement to Type 2SC2607. Minimum Lot-to-Lot.

2SA1116 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous

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Datasheet Details

Part number
2SA1116
Manufacturer
INCHANGE
File Size
203.55 KB
Datasheet
2SA1116-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SA1116-like datasheet