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2SA1306 - Silicon PNP Power Transistors

2SA1306 Description

isc Silicon PNP Power Transistors .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min). Complement to Type 2SC3298. Minimum Lot-to-Lot.

2SA1306 Applications

* Power amplifier applications.
* Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Curr

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Datasheet Details

Part number
2SA1306
Manufacturer
INCHANGE
File Size
192.31 KB
Datasheet
2SA1306-INCHANGE.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors INCHANGE
INCHANGE 2SA1306-like datasheet