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2SA614 - Silicon PNP Power Transistor

2SA614 Description

isc Silicon PNP Power Transistor 2SA614 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min. Collector-Emitter Saturation Voltage- : VCE(sat)= -0. Co.

2SA614 Applications

* Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissi

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Datasheet Details

Part number
2SA614
Manufacturer
INCHANGE
File Size
217.41 KB
Datasheet
2SA614-INCHANGE.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE
INCHANGE 2SA614-like datasheet