Datasheet4U Logo Datasheet4U.com

2SA680 - PNP Transistor

2SA680 Description

isc Silicon PNP Power Transistor 2SA680 .
High Power Dissipation- : PC= 100W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. Complement to Type 2SC1080.

2SA680 Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Co

📥 Download Datasheet

Preview of 2SA680 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SA680
Manufacturer
INCHANGE
File Size
194.83 KB
Datasheet
2SA680-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SA683 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA684 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA603 - PNP SILICON EPITAXIAL TRANSISTOR (ETC)
  • 2SA606 - PNP/NPN Transistor (ETC)
  • 2SA607 - PNP/NPN Transistor (ETC)
  • 2SA608 - PNP Transistor (JCET)
  • 2SA608-D - PNP Plastic Encapsulated Transistor (Secos)
  • 2SA608-E - PNP Plastic Encapsulated Transistor (Secos)

📌 All Tags

INCHANGE 2SA680-like datasheet