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2SA877 PNP Transistor

2SA877 Description

isc Silicon PNP Power Transistor 2SA877 .
High Power Dissipation- : PC= 100W(Max. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Minimum Lot-to-Lot variatio.

2SA877 Applications

* Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base C

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Datasheet Details

Part number
2SA877
Manufacturer
INCHANGE
File Size
189.99 KB
Datasheet
2SA877-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SA877-like datasheet