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2SA900 PNP Transistor

2SA900 Description

isc Silicon PNP Power Transistor 2SA900 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min). Good Linearity of hFE. Low Collector Saturation Voltage. Complement to Ty.

2SA900 Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector

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Datasheet Details

Part number
2SA900
Manufacturer
INCHANGE
File Size
213.09 KB
Datasheet
2SA900-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SA900-like datasheet