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2SB1079 PNP Transistor

2SB1079 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1079 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -10A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Complement to Type 2SD.

2SB1079 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A ICM Collector

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Datasheet Details

Part number
2SB1079
Manufacturer
INCHANGE
File Size
199.26 KB
Datasheet
2SB1079-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1079-like datasheet