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Power Transistors www.DataSheet4U.com
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
8.5±0.2
Unit: mm
3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 1.
2SB1070A Datasheet
