2SB1087 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) *High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifiers and low speed switc
