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2SB1478 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= -2A. Low Collector Saturation Voltage- : VCE(sat) = -2. Complement to Type.

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Datasheet Specifications

Part number
2SB1478
Manufacturer
INCHANGE
File Size
232.16 KB
Datasheet
2SB1478-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipa

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