2SB653 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Power Dissipation- : PC= 60W(Max)@TC=25℃. Complement to Type 2SD673.

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Datasheet Specifications

Part number: 2SB653
Manufacturer: INCHANGE
File Size: 207.12 KB
Datasheet: 2SB653-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector

2SB653 Distributors

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2SB653 PNP Transistor INCHANGE

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