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2SB654 PNP Transistor

2SB654 Description

isc Silicon PNP Power Transistors 2SB654 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃. Complement to Type 2SD674.

2SB654 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector

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Datasheet Details

Part number
2SB654
Manufacturer
INCHANGE
File Size
207.78 KB
Datasheet
2SB654-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB654-like datasheet