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2SB655 PNP Transistor

2SB655 Description

isc Silicon PNP Power Transistors 2SB655 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD675.

2SB655 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collecto

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Datasheet Details

Part number
2SB655
Manufacturer
INCHANGE
File Size
207.19 KB
Datasheet
2SB655-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB655-like datasheet