Datasheet4U Logo Datasheet4U.com

2SB668 PNP Transistor

2SB668 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB668 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain : hFE= 2000(Min) @IC= -0. Low Saturation Voltage.

2SB668 Applications

* Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Col

📥 Download Datasheet

Preview of 2SB668 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB668
Manufacturer
INCHANGE
File Size
181.09 KB
Datasheet
2SB668-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB605 - PNP SILICON TRANSISTOR (NEC)
  • 2SB609 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB616 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB617 - Silicon Triple Diffused Transistor (ETC)
  • 2SB617A - Silicon Triple Diffused Transistor (ETC)
  • 2SB621 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB621A - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB624 - PNP Transistor (NEC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB668-like datasheet