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2SB669 PNP Transistor

2SB669 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB669 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min). High DC Current Gain : hFE= 2000(Min) @IC= -1A. Low Saturation Voltage. M.

2SB669 Applications

* Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICP Colle

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Datasheet Details

Part number
2SB669
Manufacturer
INCHANGE
File Size
181.26 KB
Datasheet
2SB669-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB669-like datasheet