2SB669 Datasheet, Transistor, INCHANGE

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2SB669

INCHANGE

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Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= -1A *Low Saturation Voltage *

Designed for use in power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

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2SB669 PNP Transistor INCHANGE