2SB757 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). Good Linearity of hFE. High Current Capability. Wide Area of Safe Operati.

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Datasheet Specifications

Part number: 2SB757
Manufacturer: INCHANGE
File Size: 212.09 KB
Datasheet: 2SB757-INCHANGE.pdf
Description: PNP Transistor

Applications

* Audio amplifier applications
* Series regulators
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -40 V -5 V IC Collector Current-Co

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2SB757 PNP Transistor INCHANGE

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