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2SB860 PNP Transistor

2SB860 Description

isc Silicon PNP Power Transistor 2SB860 .
Collector Current: IC= -4A. Low Collector Saturation Voltage : VCE(sat)= -1. High Collector Power Dissipation. Comple.

2SB860 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector C

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Datasheet Details

Part number
2SB860
Manufacturer
INCHANGE
File Size
208.50 KB
Datasheet
2SB860-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB860-like datasheet