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2SB868 PNP Transistor

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Description

isc Silicon PNP Power Transistor 2SB868 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= -0.

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Datasheet Specifications

Part number
2SB868
Manufacturer
INCHANGE
File Size
213.50 KB
Datasheet
2SB868-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak

2SB868 Distributors

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PNP Transistor INCHANGE
INCHANGE 2SB868-like datasheet