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2SB863 PNP Transistor

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Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). Good Linearity of hFE. Complement to Type 2SD1148. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number
2SB863
Manufacturer
INCHANGE
File Size
215.88 KB
Datasheet
2SB863-INCHANGE.pdf
Description
PNP Transistor

Applications

* Power amplifier applications
* Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -

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PNP Transistor INCHANGE
INCHANGE 2SB863-like datasheet